Preparation of PZT thin films by liquid-source MOCVD using of cyclohexane solvent

Integrated Ferroelectrics

Volumn 59, Issue , 2003, Pages 1445-1451

  Nishioka, Yutaka ^a   Masuda, Takeshi ^a   Kajinuma, Masahiko ^a   Yamada, Takakazu ^a   Uematsu, Masaki ^a   Suu, Koukou ^a  

^a ULVAC INC   (Japan)

Author keywords

Cyclohexane; Ferroelectric memory; Ferroelectric thin films; FRAM; Liquid source MOCVD; PZT; Solvent; THF

Indexed keywords

CAPACITORS; FERROELECTRICITY; LEAD COMPOUNDS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PIEZOELECTRICITY; SOLVENTS; SUBSTRATES;

CYCLOHEXANE SOLVENT; FERROELECTRIC MEMORY (FRAM); LIQUID SOURCE MOCVD; THF SOLVENT;

FERROELECTRIC THIN FILMS;

EID: 22044447282     PISSN: 10584587     EISSN: 16078489     Source Type: Conference Proceeding    
DOI: 10.1080/10584580390259920     Document Type: Article

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