Ferroelectric properties of (Pb0.97La0.03)(Zr0.66Ti0.34)0.9875O3 films deposited on Si3N4-coated Si substrates by pulsed laser deposition process

Applied Physics Letters

Volumn 70, Issue 1, 1997, Pages 46-48

  Tseng, Tzu Feng ^a   Yang, Rong Pyng ^a   Liu, Kuo Shung ^a   Lin, I Nan ^a  

^a NATIONAL TSING HUA UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

DEPOSITION; ELECTRIC CONDUCTIVITY; ELECTRODES; FATIGUE OF MATERIALS; FERROELECTRICITY; LANTHANUM COMPOUNDS; LEAD COMPOUNDS; LEAKAGE CURRENTS; PERMITTIVITY; PLATINUM; PULSED LASER APPLICATIONS; SILICON WAFERS;

LANTHANUM NICKEL OXIDE; LEAD LANTHANUM ZIRCONYL TITANATE; PULSED LASER DEPOSITION; THERMAL EXPANSION COEFFICIENT;

THIN FILMS;

EID: 0031555598     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.119300     Document Type: Article

References (14)