Synthesis of novel thin-film materials by pulsed laser deposition

Science

Volumn 273, Issue 5277, 1996, Pages 898-903

  Lowndes, Douglas H ^a   Geohegan, D B ^a   Puretzky, A A ^b   Norton, D P ^a   Rouleau, C M ^a  

^a OAK RIDGE NATIONAL LABORATORY   (United States)

^b INSTITUTE OF SPECTROSCOPY   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

COMPOSITE MATERIALS; DEPOSITION; FILM GROWTH; LASER ABLATION; LASER BEAMS; MULTILAYERS; NANOSTRUCTURED MATERIALS; OXIDES; PULSED LASER APPLICATIONS; SEMICONDUCTOR DOPING; SYNTHESIS (CHEMICAL); THICKNESS CONTROL;

COMPOSITE FILMS; FILM DEPOSITION; IN SITU MONITORING; PULSED LASER DEPOSITION; REACTIVE DEPOSITION; STOICHIOMETRIC TRANSFER;

THIN FILMS;

OXIDE;

ARTICLE; CRYSTALLIZATION; ELECTRONICS; ENERGY TRANSFER; FILM; HARDNESS; LASER SURGERY; MATERIALS; PRIORITY JOURNAL; PULSED DYE LASER; RESEARCH; SEMICONDUCTOR; STOICHIOMETRY; SYNTHESIS; THICKNESS;

EID: 9444245366     PISSN: 00368075     EISSN: None     Source Type: Journal    
DOI: 10.1126/science.273.5277.898     Document Type: Article

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59. This research was carried out at Oak Ridge National Laboratory (ORNL), managed by Lockheed Martin Energy Research Corporation for the U.S. Department of Energy under contract DE-AC05-96OR22464. C.M.R. was supported by an appointment to the ORNL Postdoctoral Research Associates Program administered jointly by ORNL and the Oak Ridge Institute for Science and Education.