Carrier mobility in advanced CMOS devices with metal gate and HfO2 gate dielectric

Solid-State Electronics

Volumn 47, Issue 10, 2003, Pages 1617-1621

  Lime, F ^a   Oshima, K ^a,b   Casse M ^b   Ghibaudo, G ^a   Cristoloveanu, S ^a   Guillaumot, B ^b,c   Iwai, H ^d  

^a IMEP LAHC   (France)

^b CEA LETI   (France)

^c STMICROELECTRONICS   (France)

^d TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

HfO2; High k dielectrics; Mobility; MOSFET

Indexed keywords

CHEMICAL VAPOR DEPOSITION; DEGRADATION; DIELECTRIC MATERIALS; ELECTRON MOBILITY; GATES (TRANSISTOR); HAFNIUM COMPOUNDS; MOSFET DEVICES;

METAL GATES;

CMOS INTEGRATED CIRCUITS;

EID: 0042093589     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(03)00176-X     Document Type: Conference Paper

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