Atomic layer deposition of Al2O3, ZrO2, Ta2O5, and Nb2O5 based nanolayered dielectrics

Journal of Non-Crystalline Solids

Volumn 303, Issue 1, 2002, Pages 35-39

  Kukli, Kaupo ^a   Ritala, Mikko ^a   Leskelä, Markku ^a   Sajavaara, Timo ^a   Keinonen, Juhani ^a   Gilmer, David ^b   Bagchi, Sandeep ^b   Prabhu, Lata ^b  

^a UNIVERSITY OF HELSINKI   (Finland)

^b MOTOROLA INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; DEPOSITION; ELECTRIC CONDUCTIVITY; FILM GROWTH; NANOSTRUCTURED MATERIALS; PERMITTIVITY; SOLID SOLUTIONS; SUBSTRATES; SURFACE ROUGHNESS;

ATOMIC LAYER DEPOSITION;

DIELECTRIC MATERIALS;

EID: 0036567834     PISSN: 00223093     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-3093(02)00961-4     Document Type: Article

References (17)