Reliability characteristics of high- k dielectrics

Microelectronics Reliability

Volumn 44, Issue 2, 2004, Pages 183-193

  Kim, Young Hee ^a   Lee, Jack C ^a  

^a The University of Texas at Austin   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ANALYSIS; DOPING (ADDITIVES); ELECTRIC BREAKDOWN; ELECTRIC POTENTIAL; ELECTRON TRAPS; ELECTRON TUNNELING; ENERGY GAP; FREQUENCIES; HIGH TEMPERATURE EFFECTS; INTEGRATED CIRCUIT LAYOUT; LEAKAGE CURRENTS; MICROPROCESSOR CHIPS; MOS CAPACITORS; STRESSES; SUBSTRATES; WEIBULL DISTRIBUTION;

ELECTRIC FLUCTUATIONS; SOFT ELECTRIC BREAKDOWN; VOLTAGE STRESS;

DIELECTRIC MATERIALS;

EID: 0942266463     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.microrel.2003.10.008     Document Type: Article

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