Cleaning of Si and properties of the HfO2-Si interface

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 21, Issue 3, 2003, Pages 718-722

  Choi, K ^a   Harris, H ^a   Gangopadhyay, S ^a   Temkin, H ^a  

^a TEXAS TECH UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; CAPACITORS; DIELECTRIC MATERIALS; ELECTRIC POTENTIAL; ELECTRON BEAMS; EVAPORATION; HAFNIUM COMPOUNDS; LOW ENERGY ELECTRON DIFFRACTION; PARTIAL PRESSURE; PERMITTIVITY; SILICON WAFERS; SURFACE CLEANING;

CAPACITANCE-VOLTAGE CURVE; HAFNIUM DIOXIDE; MODIFIED SHIRAKI CLEAN; NATIVE OXIDE REGROWTH; REACTIVE ELECTRON BEAM EVAPORATION;

INTERFACES (MATERIALS);

EID: 0038274482     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1569922     Document Type: Article

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