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Electrochemical and Solid-State Letters

Volumn 6, Issue 10, 2003, Pages

Characterization of temperature dependence for HfO2 gate dielectrics treated in NH3 plasma

(4) Wang, Jer Chyi a Shie, De Ching a Lei, Tan Fu a Lee, Chung Len a

a NATIONAL CHIAO TUNG UNIVERSITY (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; AMMONIA; AUGER ELECTRON SPECTROSCOPY; CHEMICAL ANALYSIS; CURRENT VOLTAGE CHARACTERISTICS; DIELECTRIC MATERIALS; ELECTRON SPECTROSCOPY; GATES (TRANSISTOR); MAGNETIC HYSTERESIS; PLASMAS; THERMAL EFFECTS; ULTRATHIN FILMS;

CHARGE TRAPPING; GATE DIELECTRICS; HAFNIUM OXIDES; TEMPERATURE DEPENDENCE;

HAFNIUM COMPOUNDS;

EID: 1842865779 PISSN: 10990062 EISSN: None Source Type: Journal
DOI: 10.1149/1.1605272 Document Type: Article

Times cited : (30)

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