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Volumn 47, Issue 5, 2003, Pages 801-805

Capacitance-voltage measurements on ultrathin gate dielectrics

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; DIELECTRIC MATERIALS; ELECTRIC POTENTIAL; ULTRATHIN FILMS;

EID: 0037406949     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(02)00340-4     Document Type: Article
Times cited : (19)

References (12)
  • 1
    • 0035872897 scopus 로고    scopus 로고
    • High-k gate dielectrics: Current status and materials properties considerations
    • Wilk G.D., Wallace R.M., Anthony J.M. High-. k gate dielectrics: current status and materials properties considerations J. Appl. Phys. 89(10):2001;5243-5275.
    • (2001) J. Appl. Phys. , vol.89 , Issue.10 , pp. 5243-5275
    • Wilk, G.D.1    Wallace, R.M.2    Anthony, J.M.3
  • 2
    • 0036501118 scopus 로고    scopus 로고
    • Issues in high- k gate stack interfaces
    • Misra V., Lucovsky G., Parsons G. Issues in high-. k gate stack interfaces MRS Bull. 27(3):2002;212-216.
    • (2002) MRS Bull. , vol.27 , Issue.3 , pp. 212-216
    • Misra, V.1    Lucovsky, G.2    Parsons, G.3
  • 3
    • 0036501296 scopus 로고    scopus 로고
    • Electronic structure and band offsets of high-dielectric constant gate oxides
    • Robertson J. Electronic structure and band offsets of high-dielectric constant gate oxides. MRS Bull. 27(3):2002;217-221.
    • (2002) MRS Bull. , vol.27 , Issue.3 , pp. 217-221
    • Robertson, J.1
  • 5
    • 0030291621 scopus 로고    scopus 로고
    • Thermodynamic stability of binary oxides in contact with silicon
    • Hubbard K.J., Schlom D.G. Thermodynamic stability of binary oxides in contact with silicon. J. Mater. Res. 11(11):1996;2757-2776.
    • (1996) J. Mater. Res. , vol.11 , Issue.11 , pp. 2757-2776
    • Hubbard, K.J.1    Schlom, D.G.2
  • 8
    • 0022693258 scopus 로고
    • Dual-frequency modified C/V technique
    • Lonnum J.F., Johannessen J.S. Dual-frequency modified. C/V technique Electron. Lett. 22(9):1986;456-457.
    • (1986) Electron. Lett. , vol.22 , Issue.9 , pp. 456-457
    • Lonnum, J.F.1    Johannessen, J.S.2
  • 9
    • 0032679052 scopus 로고    scopus 로고
    • MOS capacitance measurements for high-leakage thin dielectrics
    • Yang K.J., Chenming H. MOS capacitance measurements for high-leakage thin dielectrics. IEEE Trans. Electron Dev. 46(7):1999;1500-1501.
    • (1999) IEEE Trans. Electron Dev. , vol.46 , Issue.7 , pp. 1500-1501
    • Yang, K.J.1    Chenming, H.2
  • 12
    • 0035998549 scopus 로고    scopus 로고
    • Electron trapping in noncrystalline remote plasma deposited Hf-aluminate alloys for gate dielectric applications
    • Johnson R.S., Hong J.G., Hinkle C., Lucovsky G. Electron trapping in noncrystalline remote plasma deposited Hf-aluminate alloys for gate dielectric applications. J. Vac. Sci. Technol. B. 20(3):2002;1126-1131.
    • (2002) J. Vac. Sci. Technol. B , vol.20 , Issue.3 , pp. 1126-1131
    • Johnson, R.S.1    Hong, J.G.2    Hinkle, C.3    Lucovsky, G.4


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.