Effects of interface oxide layer on HfO2 gate dielectrics [MISFETS]

Extended Abstracts of International Workshop on Gate Insulator, IWGI 2001

Volumn , Issue , 2001, Pages 184-187

  Morisaki, Y ^a   Sugita, Y ^a   Irino, K ^a   Aoyama, T ^a  

^a FUJITSU LABORATORIES LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; FIELD EFFECT TRANSISTORS; HAFNIUM OXIDES; METAL INSULATOR BOUNDARIES; MIS DEVICES; MISFET DEVICES; RECONFIGURABLE HARDWARE; VAPOR DEPOSITION;

ATOMIC LAYER CHEMICAL VAPOR DEPOSITION; GATE STACKS; INTERFACE OXIDE;

GATE DIELECTRICS;

EID: 1842850988     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IWGI.2001.967579     Document Type: Conference Paper

References (7)

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