Good quality Al/SiNx:H/InP metal-insulator-semiconductor devices obtained with electron cyclotron resonance plasma method

Journal of Applied Physics

Volumn 83, Issue 1, 1998, Pages 600-603

  Garcia, S ^a   Martil I ^a   Gonzalez Diaz, G ^a   Castan, E ^b   Duenas S ^b   Fernandez, M ^c  

^a UNIVERSIDAD COMPLUTENSE DE MADRID   (Spain)

^b UNIVERSITY OF VALLADOLID   (Spain)

^c INSTITUTO DE CIENCIA DE MATERIALES DE MADRID   (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMS; DEEP LEVEL TRANSIENT SPECTROSCOPY; ELECTRIC PROPERTIES; ELECTRON CYCLOTRON RESONANCE; INTERFACES (MATERIALS); MOLECULAR BEAM EPITAXY; SURFACES; THIN FILMS;

INTERFACE CONTROL LAYER; TRAP DENSITY;

MISFET DEVICES;

EID: 0031647567     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.366647     Document Type: Article

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