Atomic layer deposition of HfO2 thin films and nanolayered HfO2-Al2O3-Nb2O5 dielectrics

Journal of Materials Science: Materials in Electronics

Volumn 14, Issue 5-7, 2003, Pages 361-367

  Kukli, Kaupo ^a,c   Ritala, Mikko ^a   Leskelä, Markku ^a   Sajavaara, Timo ^a   Keinonen, Juhani ^a   Gilmer, David C ^b   Hegde, Rama ^b   Rai, Raghaw ^b   Prabhu, Lata ^b  

^a UNIVERSITY OF HELSINKI   (Finland)

^b MOTOROLA INC   (United States)

^c UNIVERSITY OF TARTU   (Estonia)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINA; AMORPHOUS MATERIALS; ANNEALING; CRYSTALLIZATION; DEPOSITION; DIELECTRIC MATERIALS; ELECTRIC CONDUCTIVITY; FILM GROWTH; HYSTERESIS; NANOSTRUCTURED MATERIALS; NIOBIUM COMPOUNDS; STOICHIOMETRY;

ATOMIC LAYER DEPOSITION; CAPACITANCE VOLTAGE CURVES; HAFNIA; NANOLAYERED DIELECTRICS;

HAFNIUM COMPOUNDS;

EID: 0038149103     PISSN: 09574522     EISSN: None     Source Type: Journal    
DOI: 10.1023/A:1023948617372     Document Type: Article

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