Nanotechnology goals and challenges for electronic applications

IEEE Transactions on Nanotechnology

Volumn 1, Issue 1, 2002, Pages 56-62

  Bohr, Mark T ^a,b  

^a IEEE   (United States)

^b INTEL CORPORATION   (United States)

Author keywords

Carbon nanotube; Complimentary metal oxide semiconductor (CMOS); Dynamic random access memory (DRAM); Logic; Memory, metal oxide semiconductor (MOS); Metal oxide semiconductor field effect transistor (MOSFET); Molecular electronics; Nanotechnology; Nanowire

Indexed keywords

DYNAMIC RANDOM ACCESS MEMORY (DRAM); MOLECULAR ELECTRONICS; NANOWIRE; SUBTHRESHOLD LEAKAGE;

CARBON NANOTUBES; CMOS INTEGRATED CIRCUITS; FORMAL LOGIC; MOS DEVICES; MOSFET DEVICES;

NANOTECHNOLOGY;

EID: 0038233833     PISSN: 1536125X     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNANO.2002.1005426     Document Type: Article

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