A versatile 0.13 μm CMOS platform technology supporting high performance and low power applications

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 2000, Pages 571-

  Perera, A H ^a   Smith, B ^a   Cave, N ^a   Sureddin, M ^a   Chheda, S ^a   Singh, R ^a   Islam, R ^a   Chang, J ^a   Song, S C ^a   Sultan, A ^a   Crown, S ^a   Kolagunta, V ^a   Shah, S ^a   Celik, M ^a   Wu, D ^a   Yu, K C ^a   Fox, R ^a   Park, S ^a   Simpson, C ^a   Eades, D ^a   Gonzales, S ^a   Thomas, C ^a   Sturtevant, J ^a   Bonser, D ^a   Benavides, N ^a   Thompson, M ^a   Sheth, V ^a   Fretwell, J ^a   Kim, S ^a   Ramani, N ^a   Green, K ^a   Moosa, M ^a   Besser, P ^a   Solomentsev, Y ^a   Denning, D ^a   Friedemann, M ^a   Baker, B ^a   Chowdhury, R ^a   Ufmani, S ^a   Strozewski, K ^a   Carter, R ^a   Reiss, J ^a   Olivares, M ^a   Ho, B ^a   Lii, T ^a   Sparks, T ^a   Stephens, T ^a   Schaller, M ^a   Goldberg, C ^a   Junker, K ^a   Wristers, D ^a   Alvis, J ^a   Melnick, B ^a   Venkatesan, S ^a   more..

^a MOTOROLA INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

INTERFACES (COMPUTER); LEAKAGE CURRENTS; LITHOGRAPHY; SCANNING ELECTRON MICROSCOPY; STATIC RANDOM ACCESS STORAGE;

NON-VOLATILE MEMORY (NVM);

CMOS INTEGRATED CIRCUITS;

EID: 17644440986     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (3)