0.1 μm-rule MRAM development using double-layered hard mask

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 2001, Pages 799-802

  Tsuji, K ^a   Suemitsu, K ^a   Mukai, T ^a   Nagahara, K ^a   Masubuchi, H ^a   Utsumi, H ^a   Kikuta, K ^a  

^a R and D Support Center   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ASPECT RATIO; MAGNETORESISTANCE; MASKS; PHOTORESISTS;

DOUBLE-LAYERED HARD MASK; TUNNELING MAGNETORESISTANCE;

RANDOM ACCESS STORAGE;

EID: 0035714650     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (4)