On the interpretation of high-frequency capacitance data of SiC MOS structures: The effect of thermal non-equilibrium

Materials Science Forum

Volumn 264-268, Issue PART 2, 1998, Pages 981-984

  Sadeghi, M ^a   Liss, B ^a   Sveinbjornsson E O ^a   Engstrom O ^a  

^a CHALMERS UNIVERSITY OF TECHNOLOGY   (Sweden)

Author keywords

CV Analysis; Deep Traps; MOS; Thermal Non Equilibrium

Indexed keywords

CAPACITANCE; CHARGE CARRIERS; COMPUTER SIMULATION; ENERGY GAP; MATHEMATICAL MODELS; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR INSULATOR BOUNDARIES; SILICON CARBIDE;

CAPACITANCE VOLTAGE CHARACTERISTICS;

MOS DEVICES;

EID: 0031648186     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.264-268.981     Document Type: Article

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