Highly doped thin-channel GaN-metal-semiconductor field-effect transistors

Applied Physics Letters

Volumn 78, Issue 6, 2001, Pages 769-771

  Gaska, R ^a   Shur, M S ^a   Hu, X ^b   Yang, J W ^b   Tarakji, A ^b   Simin, G ^b   Khan, A ^b   Deng, J ^c   Werner, T ^c   Rumyantsev, S ^c   Pala, N ^c  

^a SENSOR ELECTRONIC TECHNOLOGY INC   (United States)

^b UNIVERSITY OF SOUTH CAROLINA   (United States)

^c RENSSELAER POLYTECHNIC INSTITUTE   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001115039     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1344577     Document Type: Article

References (12)

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