Effect of illumination on the electrical characteristics of AlGaN/GaN FETs

Physica Status Solidi (A) Applied Research

Volumn 176, Issue 1, 1999, Pages 209-212

  Dietrich, R ^a   Vescan, A ^a   Wieszt, A ^a   Leier, H ^a   Boutros, K S ^b   Redwing, J M ^b   Kornitzer, K ^c   Freitag, R ^c   Ebner, T ^c   Thonke, K ^c  

^a DAIMLER AG   (Germany)

^b Epitronics/ATMI   (United States)

^c UNIVERSITY OF ULM   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; CARRIER MOBILITY; PIEZOELECTRIC DEVICES; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; THERMAL EFFECTS; ULTRAVIOLET RADIATION;

DRAIN CURRENT DELAY EFFECT; TEMPERATURE DEPENDENCE;

FIELD EFFECT TRANSISTORS;

EID: 18244430080     PISSN: 00318965     EISSN: None     Source Type: Journal    
DOI: 10.1002/(SICI)1521-396X(199911)176:1<209::AID-PSSA209>3.0.CO;2-Q     Document Type: Article

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