Use of minority carriers in noise spectroscopy for the determination of local level parameters in 6H-SiC

Semiconductor Science and Technology

Volumn 11, Issue 8, 1996, Pages 1146-1150

  Palmour, J W ^a   Levinshtein, M E ^b   Rumyantsev, S L ^b  

^a Arkansas Power Electronics International Inc   (United States)

^b IOFFE INSTITUTE   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; CHARGE CARRIERS; ELECTRONS; ENERGY GAP; INJECTION LASERS; SEMICONDUCTOR JUNCTIONS; SILICON CARBIDE; THERMAL EFFECTS;

CONDUCTION BAND; LEVEL CONCENTRATION; LOCAL LEVEL PARAMETERS; MINORITY CARRIERS;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 0030205868     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/11/8/004     Document Type: Article

References (9)

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2. Levinshtein M E and Rumyantsev S L 1995 Semiconductors 29 74
3. Dyakonova N V, Levinshtein M E and Rumyantsev S L 1991 Sov. Phys. Semicond. 25 1241
4. Levinshtein M E, Palmour J W and Rumyantsev S L 1994 Semicond. Sci. Technol. 9 2080
5. Levinshtein M E, Rumyantsev S L and Palmour J W 1993 Tech. Phys. Lett. 19 513
6. Anikin M M, Kuznetsov N I, Lebedev A A, Savkina N S, Syrkin A L and Chelnokov V E 1994 Semiconductors 28 278
7. Lebedev A A and Chelnokov V E 1994 Diamond Related Mater. 3 1393
8. Evwaraye A O, Smith S R and Mitchel WC 1994 J. Appl. Phys. 75 3472
9. Palmour J W, Kong H S, Waltz D G, Edmond J A and Carter C H Jr 1991 Proc. 1st Int. High Temperature Electronics Conf. (Albuquerque, NM, 1991) p 511