SCOPUS 정보 검색 플랫폼 - 논문 보기

메뉴 건너뛰기

Journal of Applied Physics

Volumn 90, Issue 1, 2001, Pages 310-314

Low frequency noise in GaN metal semiconductor and metal oxide semiconductor field effect transistors

(9) Rumyantsev, S L a,b Pala, N a Shur, M S a Gaska, R a,d Levinshtein, M E b Asif Khan, M c Simin, G c Hu, X c Yang, J c

a Ctr Intgd Electronics E (United States)

b IOFFE INSTITUTE (Russian Federation)

c University of South Carolina (United States)

d SENSOR ELECTRONIC TECHNOLOGY INC (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0035395422 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.1372364 Document Type: Article

Times cited : (46)

References (21)

1
- 0001115039
- R. Gaska, M. S. Shur, X. Hu, A. Khan, J. W. Yang, A. Taraki, G. Simin, J. Deng, T. Werner, S. Rumyantsev, and N. Pala, Appl. Phys. Lett. 78, 769 (2001).
- (2001) Appl. Phys. Lett. , vol.78 , pp. 769
- Gaska, R.¹ Shur, M.S.² Hu, X.³ Khan, A.⁴ Yang, J.W.⁵ Taraki, A.⁶ Simin, G.⁷ Deng, J.⁸ Werner, T.⁹ Rumyantsev, S.¹⁰ Pala, N.¹¹

2
- 0028446783
- M. E. Levinshtein and S. L. Rumyantsev, Semicond. Sci. Technol. 9, 1183 (1994).
- (1994) Semicond. Sci. Technol. , vol.9 , pp. 1183
- Levinshtein, M.E.¹ Rumyantsev, S.L.²

3
- 0020125224
- J. Graffeuil, K. Tantrarongroj, and J. F. Sautereau, Solid-State Electron. 25, 367 (1982).
- (1982) Solid-State Electron. , vol.25 , pp. 367
- Graffeuil, J.¹ Tantrarongroj, K.² Sautereau, J.F.³

4
- 0029754694
- M. Chertouk and A. Chovet, IEEE Trans. Electron Devices 43, 123 (1996).
- (1996) IEEE Trans. Electron Devices , vol.43 , pp. 123
- Chertouk, M.¹ Chovet, A.²

5
- 0347486706
- L. Dobrzanski and Z. Wolosiak, J. Appl. Phys. 87, 517 (2000).
- (2000) J. Appl. Phys. , vol.87 , pp. 517
- Dobrzanski, L.¹ Wolosiak, Z.²

6
- 0000417076
- S. Rumyantsev, M. E. Levinshtein, R. Gaska, M. S. Shur, J. W. Jang, and M. A. Khan, J. Appl. Phys. 87, 1849 (2000).
- (2000) J. Appl. Phys. , vol.87 , pp. 1849
- Rumyantsev, S.¹ Levinshtein, M.E.² Gaska, R.³ Shur, M.S.⁴ Jang, J.W.⁵ Khan, M.A.⁶

7
- 0001668518
- S. Rumyantsev, N. Pala, M. S. Shur, R. Gaska, M. E. Levinshtein, A. Khan, G. Simin, X. Hu, and S. W. Jang, J. Appl. Phys. 88, 6726 (2000).
- (2000) J. Appl. Phys. , vol.88 , pp. 6726
- Rumyantsev, S.¹ Pala, N.² Shur, M.S.³ Gaska, R.⁴ Levinshtein, M.E.⁵ Khan, A.⁶ Simin, G.⁷ Hu, X.⁸ Jang, S.W.⁹

8
- 0347492366
- 24-27, September Nagoya, Japan
- S. L. Rumyantsev. N. Pala, M. S. Shur, M. E. Levinshtein, R. Gaska, X. Hu, J. Yang, G. Simin, and M. Asif Khan, International Workshop on Nitride Semiconductors, 24-27, September 2000 Nagoya, Japan.
- (2000) International Workshop on Nitride Semiconductors
- Rumyantsev, S.L.¹ Pala, N.² Shur, M.S.³ Levinshtein, M.E.⁴ Gaska, R.⁵ Hu, X.⁶ Yang, J.⁷ Simin, G.⁸ Asif Khan, M.⁹

9
- 0033873942
- P. A. Ivanov, M. E. Levinshtein, J. W. Palmour, and S. L. Rumyantsev, Semicond. Sci. Technol. 15, 164 (2000).
- (2000) Semicond. Sci. Technol. , vol.15 , pp. 164
- Ivanov, P.A.¹ Levinshtein, M.E.² Palmour, J.W.³ Rumyantsev, S.L.⁴

10
- 0026382708
- J. H. Scofield and D. M. Fleetwood, IEEE Trans. Nucl. Sci. 38, 1567 (1991).
- (1991) IEEE Trans. Nucl. Sci. , vol.38 , pp. 1567
- Scofield, J.H.¹ Fleetwood, D.M.²

11
- 0002300407
- P. O. Lauritzen, Solid-State Electron. 8, 41 (1965).
- (1965) Solid-State Electron. , vol.8 , pp. 41
- Lauritzen, P.O.¹

12
- 21544447465
- A. van der Ziel, Proc. IEEE 51, 1670 (1965).
- (1965) Proc. IEEE , vol.51 , pp. 1670
- Van Der Ziel, A.¹

13
- 0000073947
- N. V. Dyakonova, M. E. Levinshtein, S. L. Rumyantsev, Sov. Phys. Semicond. 25, 1241 (1991).
- (1991) Sov. Phys. Semicond. , vol.25 , pp. 1241
- Dyakonova, N.V.¹ Levinshtein, M.E.² Rumyantsev, S.L.³

14
- 0025508097
- J.-M. Peransin, P. Vignaud, D. Rigaud and L. K. J. Vandamme, IEEE Trans. Electron Devices 37, 2250 (1990).
- (1990) IEEE Trans. Electron Devices , vol.37 , pp. 2250
- Peransin, J.-M.¹ Vignaud, P.² Rigaud, D.³ Vandamme, L.K.J.⁴

15
- 0033732350
- A. Balandin, Electron. Lett. 36, 912 (2000).
- (2000) Electron. Lett. , vol.36 , pp. 912
- Balandin, A.¹

16
- 0028550128
- F. N. Hooge, IEEE Trans. Electron Devices 41, 1926 (1994).
- (1994) IEEE Trans. Electron Devices , vol.41 , pp. 1926
- Hooge, F.N.¹

17
- 0001484174
- M. E. Levinshtein, S. L. Rumyantsev, D. C. Look, R. J. Molnar, M. Asif Khan, G. Simin, V. Adivarahan, and M. S. Shur, J. Appl. Phys. 86, 5075 (1999).
- (1999) J. Appl. Phys. , vol.86 , pp. 5075
- Levinshtein, M.E.¹ Rumyantsev, S.L.² Look, D.C.³ Molnar, R.J.⁴ Asif Khan, M.⁵ Simin, G.⁶ Adivarahan, V.⁷ Shur, M.S.⁸

18
- 0001350590
- A. K. Rice and K. J. Malloy, J. Appl. Phys. 87, 7892 (2000).
- (2000) J. Appl. Phys. , vol.87 , pp. 7892
- Rice, A.K.¹ Malloy, K.J.²

19
- 0032665814
- A. Balandin, S. V. Morozov, S. Cai, R. Li, K. L. Wang, G. Wijerathe, and C. R. Viswanathan, IEEE Trans. Microwave Theory Tech. 47, 1413 (1999).
- (1999) IEEE Trans. Microwave Theory Tech. , vol.47 , pp. 1413
- Balandin, A.¹ Morozov, S.V.² Cai, S.³ Li, R.⁴ Wang, K.L.⁵ Wijerathe, G.⁶ Viswanathan, C.R.⁷

20
- 0001642113
- J. A. Garrido, B. E. Foutz, J. A. Smart, J. R. Shealy, M. J. Murphy, W. J. Schaff, and L. F. Eastman, Appl. Phys. Lett. 76, 3442 (2000).
- (2000) Appl. Phys. Lett. , vol.76 , pp. 3442
- Garrido, J.A.¹ Foutz, B.E.² Smart, J.A.³ Shealy, J.R.⁴ Murphy, M.J.⁵ Schaff, W.J.⁶ Eastman, L.F.⁷

21
- 0004130081
- Plenum, New York
- M. S. Shur, GaAs Devices and Circuits (Plenum, New York, 1987).
- (1987) GaAs Devices and Circuits
- Shur, M.S.¹

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.