Deep surface states on the interface between SiC and its native thermal oxide

Technical Physics Letters

Volumn 23, Issue 10, 1997, Pages 798-800

  Ivanov, P A ^a   Ignat'ev, K I ^a   Panteleev, V N ^a   Samsonova, T P ^a  

^a IOFFE INSTITUTE   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0031496322     PISSN: 10637850     EISSN: None     Source Type: Journal    
DOI: 10.1134/1.1261806     Document Type: Article

References (6)

1. P. A. Ivanov, A. O Konstantinov, V. N. Panteleev, T. P. Samsonova, and V. E. Chelnokov, Semiconductors 28, 668 (1994).
2. D. M. Brown, M. Ghezzo, J. Kretchmer, E. Downey, E. Pimbley, and J. Palmour, IEEE Trans. Electron Devices ED-41, 618 (1994).
3. S. Sridevan, V. Mistra, P. K. McLarty, B. J. Baliga, and J. J. Wortmann, in Silicon Carbide and Related Materials 1995 (Institute of Physics Conference Series No. 142), S. Nakashima, H. Matsunami, S. Yishida, and H. Harima (eds.), Institute of Physics, Bristol-Philadelphia (1996), pp. 645-648.
4. S. M. Sze, Physics of Semiconductor Devices, 2nd ed., Wiley-Interscience, New York (1969); Mir, Moscow (1984), Vol. 1.
5. P. A. Ivanov, V. N. Panteleev, T. P. Samsonova, and V. E. Chelnokov, Semiconductors 29, 135 (1995).
6. G. J. Geardi, E. H. Poindexter, and P. J. Caplan, Appl Phys. Lett. 49, 348 (1986).