Sub-bandgap absorption of gallium nitride determined by photothermal deflection spectroscopy

Solid State Communications

Volumn 97, Issue 5, 1996, Pages 365-370

  Ambacher, O ^a   Rieger, W ^a   Ansmann, P ^a   Angerer, H ^a   Moustakas, T D ^b   Stutzmann, M ^a  

^a WALTER SCHOTTKY INSTITUT   (Germany)

^b BOSTON UNIVERSITY   (United States)

Author keywords

A. semiconductor; B. epitaxy; E. light absorption

Indexed keywords

BAND STRUCTURE; CHARGE CARRIERS; CHEMICAL VAPOR DEPOSITION; ELECTRON CYCLOTRON RESONANCE; ENERGY GAP; HEATING; LIGHT ABSORPTION; MOLECULAR BEAM EPITAXY; SPECTROSCOPY; THERMODYNAMIC STABILITY;

FREE CARRIERS; GALLIUM NITRIDE; OPTICAL BAND EDGE; PHOTOTHERMAL DEFLECTION SPECTROSCOPY; SUB BANDGAP ABSORPTION;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0030083196     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/0038-1098(95)00658-3     Document Type: Article

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