Low-frequency noise in 4H-silicon carbide junction field effect transistors

Applied Physics Letters

Volumn 68, Issue 19, 1996, Pages 2669-2671

  Palmour, J W ^a   Levinshtein, M E ^b   Rumyantsev, S L ^b   Simin, G S ^b  

^a Arkansas Power Electronics International Inc   (United States)

^b IOFFE INSTITUTE   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0009172059     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.116276     Document Type: Article

References (10)

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