Low frequency noise in 4H silicon carbide

Journal of Applied Physics

Volumn 81, Issue 4, 1997, Pages 1758-1762

  Levinshtein, M E ^a   Rumyantsev, S L ^a   Palmour, J W ^b   Slater Jr , D B ^b  

^a IOFFE INSTITUTE   (Russian Federation)

^b Arkansas Power Electronics International Inc   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000276593     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.364007     Document Type: Article

References (41)

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