Characterization of flicker noise in GaN-based MODFET's at low drain bias

IEEE Transactions on Electron Devices

Volumn 46, Issue 6, 1999, Pages 1099-1104

  Ho, W Y ^a   Surya, Charles ^a   Tong, K Y ^a   Kim, Wook ^a   Botcharev, Andrei E ^a   Morkoc, Hadis ^a  

^a HONG KONG POLYTECHNIC UNIVERSITY   (Hong Kong)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; ELECTRIC POTENTIAL; ELECTRON TRAPS; ELECTRONS; INTERFACES (MATERIALS); MOLECULAR BEAM EPITAXY; SAPPHIRE; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SPECTRUM ANALYSIS; SPURIOUS SIGNAL NOISE; TEMPERATURE;

BASAL PLANE SAPPHIRE SUBSTRATES; DRAIN VOLTAGE; FLICKER NOISE; GATE BIAS; MCWHORTER MODEL; MODFET; THERMAL ACTIVATION; VOLTAGE NOISE POWER SPECTRA;

FIELD EFFECT TRANSISTORS;

EID: 0032630403     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.766870     Document Type: Article

References (31)