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Volumn 76, Issue 16, 2000, Pages 2277-2279

Performance degradation of small silicon devices caused by long-range Coulomb interactions

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Indexed keywords


EID: 0001088148     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.126320     Document Type: Article
Times cited : (31)

References (23)
  • 2
    • 35949009958 scopus 로고
    • M. V. Fischetti and S. E. Laux, Phys. Rev. B 38, 9721 (1988); S. E. Laux and M. V. Fischetti, in Monte Carlo Device Simulation: Full Band and Beyond, edited by K. Hess (Kluwer, Boston, 1991), p. 1.
    • (1988) Phys. Rev. B , vol.38 , pp. 9721
    • Fischetti, M.V.1    Laux, S.E.2
  • 15
    • 85037506408 scopus 로고    scopus 로고
    • http://www.research.ibm.com/DAMOCLES/html_files/mueff.html.
  • 21
    • 0023980804 scopus 로고
    • A large momentum-transfer rate between electron layers across a dielectric was previously obtained by C. Jacaboni and P. J. Price, Solid-State Electron. 31, 649 (1988).
    • (1988) Solid-state Electron. , vol.31 , pp. 649
    • Jacaboni, C.1    Price, P.J.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.