High-frequency four noise parameters of silicon-on-insulator-based technology MOSFET for the design of low-noise RF integrated circuits

IEEE Transactions on Electron Devices

Volumn 46, Issue 8, 1999, Pages 1733-1741

  Dambrine, Gilles ^a,b   Raskin, Jean Pierre ^a  

^a IEEE

^b INSTITUT D ELECTRONIQUE   (France)

Author keywords

[No Author keywords available]

Indexed keywords

AMPLIFIERS (ELECTRONIC); CMOS INTEGRATED CIRCUITS; COMMUNICATION SYSTEMS; GATES (TRANSISTOR); INTEGRATED CIRCUIT LAYOUT; SEMICONDUCTOR DEVICE MODELS; SILICON ON INSULATOR TECHNOLOGY; SPURIOUS SIGNAL NOISE;

HIGH FREQUENCY NOISE PROPERTIES; LOW NOISE RADIO FREQUENCY INTEGRATED CIRCUITS; SILICON ON INSULATOR BASED TECHNOLOGY MOSFET;

MOSFET DEVICES;

EID: 0033169524     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.777164     Document Type: Article

References (42)

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