A 1.5-V, 1.5-GHz CMOS low noise amplifier

IEEE Journal of Solid-State Circuits

Volumn 32, Issue 5, 1997, Pages 745-759

  Shaeffer, Derek K ^a,b,c,d,e   Lee, Thomas H ^a,b,d,f,g,h  

^a IEEE   (United States)

^b Stanford University   (United States)

^c UNIVERSITY OF SOUTHERN CALIFORNIA   (United States)

^d STANFORD UNIVERSITY   (United States)

^e TEKTRONIX INC   (United States)

^f MASSACHUSETTS INSTITUTE OF TECHNOLOGY   (United States)

^g ANALOG DEVICES INC   (United States)

^h RAMBUS INC   (United States)

Author keywords

Amplifier noise; Induced gate noise; Low noise amplifier; Microwave amplifier; MOSFET amplifier; Noise figure; Random noise; Semiconductor device noise

Indexed keywords

CMOS INTEGRATED CIRCUITS; GATES (TRANSISTOR); GLOBAL POSITIONING SYSTEM; INTEGRATED CIRCUIT LAYOUT; MICROWAVE AMPLIFIERS; MOS DEVICES; MOSFET DEVICES; SPURIOUS SIGNAL NOISE; TRANSPONDERS;

LOW NOISE AMPLIFIERS (LNA); NOISE FIGURE;

RADIO FREQUENCY AMPLIFIERS;

EID: 0031147079     PISSN: 00189200     EISSN: None     Source Type: Journal    
DOI: 10.1109/4.568846     Document Type: Article

References (26)

1. A. A. Abidi, "High-frequency noise measurements on FET'st with small dimensions," IEEE Trans. Electron Devices, vol. ED-33, pp. 1801-1805, Nov. 1986.
2. R. P. Jindal, "Hot-electron effects on channel thermal none in fine-line NMOS field-effect transistors," IEEE Trans. Electron Devices, vol. ED-33, pp. 1395-1397, Sept. 1986.
3. S. Tedja, J. Van der Spiegel, and H. H. Williams, "Analytical and experimental studies of thermal noise in MOSFET's," IEEE Trans. Electron Devices, vol 41, pp. 2069-2075, Nov. 1994.
4. B. Wang, J. R. Hellums, and C. G. Sodini, "MOSFET thermal noise modeling for analog integrated circuits," IEEE J. Solid-State Circuits, vol 29, pp. 833-835, July 1994.
5. A. N. Karaniclas, "A 2.7V 900MHz CMOS LAN and mixer," in ISSCC Dig. Tech. Papers. 1996, vol. 39, pp. 50-51.
6. A. Rofougaran et al., "A 1 GHz CMOS RF front-end IC for a directconversion wireless receiver," IEEE J. Solid-State Circuits, vol. 31, pp. 880-889, July 1996.
7. S. Sheng et al., "A low-power CMOS chipset for spread-spectrum communication," in ISSCC Dig. Tech. Papers. 1996, vol. 39. pp. 346-347.
8. J. Y.-C. Chang, A. A. Abidi, and M. Gaitan, "Large suspended inductors on silicon and their use in a 2-μm CMOS RF amplifier," IEEE Electron Device Lett., vol. 14, pp. 246-248, May 1993.
9. R. Benton et al., "GaAs MMICs for an integrated GPS front-end," in GaAs-IC Symp. Dig. Tech. Papers, 1992, pp. 123-126.
10. K. R. Cioffi, "Monolithic L-band amplifiers operating at milliwatt and sub-millwatt DC power consumpations," in IEEE Microwave and Millmeter-Wave Monolithic Circuits Symp., 1992, pp. 9-12.
11. M. Nakatsugawa, Y. Yamaguchi, and M. Muraguchi, "An L-band ultra low power consumption monolithic low noise amplifier," in GaAs-IC Symp. Dig. Tech. Papers, 1993, pp. 45-48.
12. E. Heaney et al., "Ultra low power low noise amplifiers for wireless communications," in CaAs-IC Symp. Dig. Tech. Papers. 1993, pp. 49-51.
13. Y. Imai, M. Tokumitsu, and A. Minakawa, "Design and performance of low-current GaAs MMIC's for L-band front-end applications," IEEE Trans. Microwave Theory Tech., vol. 39, pp. 209-215, Feb. 1991.
14. N. H. Shcng et al., "A 30 GHz bandwidth AlGaAs-GaAs HBT directcoupled feedback amplifier," IEEE Microwave Guided Wave Lett., vol. 1, pp. 208-210, Aug. 1991.
15. R. G. Meyer and W. D. Mack, "A 1-GHz BiCMOS RF front-end IC," IEEE J. Solid-State Circuits, vol. 29, pp. 350-355, Mar. 1994.
16. K. W. Kobayashi and A. K. Oki, "A low-noise baseband 5-GHz directcoupled HBT amplifier with common-base active input match," IEEE Microwave Guided Wave Lett., vol. 4, pp. 373-375, Nov. 1994.
17. A. van der Ziel, "Noise in solid-state devices and lasers," Proc. IEEE, vol. 58, pp. 1178-1206, Aug. 1970.
18. R. P. Jindal, "Noise associated with distributed resistance of MOSFET gate structures in integrated circuits," IEEE Trans. Electron Devices, vol. ED-31, pp. 1505-1509, Oct. 1984.
19. B. Razavi, R.-H. Yan, and K. F. Lee, "Impact of distributed gate resistance on the performance of MOS devices," IEEE Trans. Circuits Syst. 1, vol. 41, pp. 750-754, Nov. 1994.
20. A. van der Ziel, Noise in Solid State Devices and Circuits. New York: Wiley, 1986.
21. _, "Gate noise in field effect transistors at moderately high frequencies," Proc. IEEE, pp. 461-467, Mar. 1963.
22. N. G. Einspruch, Ed., VLSI Electronics: Microstructure Science. New York Academic, 1989, vol. 18, ch. 1, pp. 1-37.
23. H. A. Haus et al., "Representation of noise in linear twoports," Proc. IRE. vol 48, pp. 69-74, Jan. 1960.
24. P. K. Ko, C. Hu et al., BSIM3v3 Manual, Dept. Electrical Eng. Comp. Sci., Univ. California, Berkeley, 1995.
25. B. Wang, "Wide band noise in MOSFETs," M.S. thesis, Mass. Inst. Technol., Oct. 1992.
26. K. B. Ashby et al., "High Q inductors for wireless applications in a complementary silicon bipolar process," IEEE J. Solid-State Circuits, vol. 31, pp. 4-9, Jan. 1996.