Reconciliation of Different Gate-Voltage Dependencies of 1/f Noise in n-MOS and p-MOS Transistors

IEEE Transactions on Electron Devices

Volumn 41, Issue 11, 1994, Pages 1946-1952

  Scofield, John H ^a   Borland, Nick ^a   Fleetwood, Daniel M ^b  

^a OBERLIN COLLEGE   (United States)

^b SANDIA NATIONAL LABORATORIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; CAPACITANCE; ELECTRIC CURRENTS; GATES (TRANSISTOR); MEASUREMENTS; SEMICONDUCTOR DEVICE MODELS; SIGNAL TO NOISE RATIO; THERMAL EFFECTS;

GATE VOLTAGE DEPENDENCE; MOS TRANSISTORS; POWER SPECTRAL DENSITY; SILICON CONDUCTION BAND EDGE; THRESHOLD VOLTAGE; TRAP DENSITY; VALENCE BAND EDGE;

MOSFET DEVICES;

EID: 0028548705     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/16.333810     Document Type: Article

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