Noise Modeling and Measurement Techniques

IEEE Transactions on Microwave Theory and Techniques

Volumn 36, Issue 1, 1988, Pages 1-10

  Cappy, Alain ^a  

^a UNIV LILLE   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC MEASUREMENTS; TRANSISTORS - MATHEMATICAL MODELS;

HIGH ELECTRON MOBILITY TRANSISTOR (HEMT); HIGH-FREQUENCY NOISE ANALYSIS; METAL SEMICONDUCTOR FET (MESFET);

TRANSISTORS, FIELD EFFECT;

EID: 0023844609     PISSN: 00189480     EISSN: 15579670     Source Type: Journal    
DOI: 10.1109/22.3475     Document Type: Article

References (45)

1. H. Rothe and W. Dahlke, “Theory of noisy fourpoles,” Proc. IRE, vol. 44, pp. 811–818, 1956.
2. R. A. Pucel, H. A. Haus, and H. Statz, “Signal and noise properties of gallium arsenide field effect transistors,” advances in electronics and electron physics, vol. 38, pp. 195–265, 1974.
3. T. M. Brookes, “The noise properties of high electron mobility transistors,” IEEE Trans. Electron Devices, vol. ED-33, no. 1, pp. 52–57, 1986.
4. C. F. Whiteside, G. Bosman, H. Morkoc, and W. F. Kopp, “The dc, ac, and noise properties of the GaAs:AlGaAs modulation-doped field effect transistor channel,” IEEE Trans. Electron Devices, vol. ED 33 no. 10, pp. 1439–1445, 1986.
5. A. Cappy, A. Vanoverschelde, M. Schortgen, C. Versnaeyen, and G. Salmer, “Noise modeling in submicrometer-gate two dimensional electron-gas field effect transistor,” IEEE Trans. Electron Devices, vol. ED 32, no. 12, pp. 2787–2795, 1985.
6. B. Carnez, A. Cappy, R. Fauquembergue, E. Constant, and G. Salmer, “Noise modeling in sub-micrometer-gate FET’s,” IEEE Trans. Electron Devices, vol. ED 28, no. 7, pp. 784–789, 1981.
7. A. van der Ziel, “Thermal noise in field effect transistor,” Proc. IRE, vol. 50 pp. 1808–1812, 1962.
8. A. van der Ziel, “Gate noise in field effect transistors at moderately high frequencies,” Proc. IRE, vol. 51 pp. 461–467, 1963.
9. D. Delagebeaudeuf, I. Chevrier, M. Laviron, and P. Delescluse, “A new relationship between the Fukui coefficient and optimal current value for low noise operation of field effect transistors,” IEEE Electron Device Lett., vol. EDL-6 no. 9, pp. 444–445, 1985.
10. C. Moglestue, “A Monte Carlo particle study of the intrinsic noise figure in GaAs MESFET,” IEEE Trans. Electron Devices, vol. ED-32 no. 10, pp. 2092–2096, 1985.
11. F. M. Klaasen, “High-frequency noise of the function field-effect transistor,” IEEE Trans. Electron Devices, vol. ED-14, no. 7, pp. 368–373, 1967.
12. W. Beachhold, “Noise behavior of GaAs field-effect transistor with short gate length,” IEEE Trans. Electron Devices, vol. ED-19 no. 5, pp. 674–680, 1972.
13. C. H. Oxley and A. J. Holden, “Simple models for high-frequency MESFET’s and comparison with experimental results,” in Proc. IEEE MOA, June 1986.
14. P. C. Chao, S. C. Palmateer, P. M. Smith, V. K. Mishra, K. H. G. Duh, and J. C. M. Hwang, “ Millimeter-wave low noise high electron mobility transistors,” IEEE Electron. Device Lett., vol. EDL-6, no. 10, pp. 531–533, 1985.
15. B. Kim, H. Q. Tserng, and H. D. Shih, “Millimeter-wave GaAs FET prepared by MBE,” IEEE Electron. Device Lett., vol. EDL-6 pp. 1–2, 1985.
16. P. W. Chye and C. Huang, “Quarter-Micron low noise GaAs FET’s,” IEEE Electron Device Lett., vol. EDL-3 pp. 401–403,1982.
17. J. Zimmermann, and Wu Yen, “Etude de la dynamique des electrons a deux dimensions dans les hétérojonctions,” Rev. Phys. Appl., to be published.
18. H. Fukui, “Design of microwave GaAs MESFET’s for broad-band low noise amplifiers,” IEEE Trans. Microwave Theory Tech., vol. MTT-27, pp. 643–650,1979.
19. S. J. Lee and C. R. Crowell, “Parasitic source and drain resistance in high-electron-mobility transistors,” Solid-State Electron., vol. 28 no. 7, pp. 659–668, 1985.
20. M. D. Feuer, “Two-layer model for source resistance in selectively doped heterojonction transistors,” IEEE Trans. Electron Devices, vol. ED-32, no. 1, pp. 7–11, 1985.
21. C. Versnayen, A. Vanoverschelde, A. Cappy, G. Salmer, and M. Schortgen, “Frequency dependence of source access resistance of heterojonction field-effect transistor,” Electron. Lett., vol. 21, no. 12 pp. 539–540, 1985.
22. K. H. G. Duh, P. C. Chao, P. M. Smith, L. F. Lester, and B. R. Lee, “60 GHz low noise high-electron mobility transistors,” Electron Lett., vol. 22, no. 12, pp. 547–549, 1986.
23. M. W. Pospiezalski, S. Weinreb, P. C. Chao, U. K. Mishra, S. C. Palmateer, P. M. Smith, and J. C. M. Huang, “Noise parameters and light sensitivity of low noise high electron mobility transistors at 300 and 12.5 K,” IEEE Trans. Electron Devices, vol. ED-33 pp. 218–233, 1986.
24. K. Kurokawa, “Noise in synchronized oscillators,” IEEE Trans. Microwave Theory Tech., vol. MTT-16, no. 4, pp. 234–240, 1968.
25. S. M. Liu, M. B. Das, W. Kopp, and H. Morkoc, “Noise behaviour of 1 μm gate-length modulation-doped FET’s from 10 -2 to 10 8 Hz,” IEEE Electron Device Lett., vol. EDL-6 no. 9, pp. 453–455, 1985.
26. J. M. Dieudonne, M. Pouysegur, J. Graffeuil, and J. L. Cazaux, “Correlation between low-frequency noise and low temperature performance of two-dimensional electron gas FET’s,” IEEE Trans. Electron Devices, vol. ED-33 no. 5, pp. 572–575, 1986.
27. L. Loreck, H. Dambkes, K. Heime, K. Ploog, and G. Weimann, “Deep level analysis in (AlGa)As-GaAs 2D electron gas devices by means of low frequency noise measurements,” IEEE Electron Device Lett., vol. ED-5 no. 1, pp. 9–11, 1984.
28. E. F. Schubert and K. Ploog, “Shallow and deep donors in direct gap n type A1 x Ga 1 _ x As:Si grown by molecular beam epitaxy” Phy. Rev. B, vol. 30, no. 12, pp. 7021–7029, 1984.
29. T. Baba, T. Mizutani, and M. Ogawa, “Elimination of persistent photoconductivily and improvement in Si activation coefficient by A1 spatial separation from Ga and Si in Al-Ga-As:Si solid system—A novel short period AlAs/n-GaAs superlattice,” Jap. J. Appl. Phys., vol. 22 no. 10, pp. L627-L629, 1983.
30. S. Hiyamizu, S. Sasa, T. Ishikawa, K. Kondo, and H. Ishikawa, “A new hetero structure for 2 DEG system with a Si atomic-planardoped AlAs-GaAs-AlAs quantum well structure grown by MBE,” Jap. J. Appl. Phys., vol. 24, pp. L431-L433, 1985.
31. E. Strid, “Measurement of losses in noise-matching networks,” IEEE Trans. Microwave Theory Tech., vol. MTT-29, no. 3, pp. 247–252, 1981.
32. R. Q. Lane, “The determination of device noise parameters,” Proc. IEEE, vol. 57 pp. 1461–1462, 1969.
33. G. Garuso and M. Sannino, “Computer aided determination of microwave two port noise parameters,” IEEE Trans. Microwave Theory Tech., vol. MTT-26, no. 9, pp. 639–643, 1978.
34. M. Mitama and H. Katoh, “An improved computational method for noise parameter measurement,” IEEE Trans. Microwave Theory Tech., vol. MTT-27, no. 6, pp. 612–615, 1979.
35. M. Sannino, “Computer aided simultaneous determination of noise and gain parameters of microwave transistors,” in Proc. European Microwave Conf., (Brighton, U.K.), pp. 692–695, 1979.
36. M. Sannino, “On the determination of device noise and gain parameters,” Proc. IEEE, vol. 67 no. 9, pp. 1364–1367, 1979.
37. E. F. Calandra, G. Martines, and M. Sannino, “Characterization of GaAs FET’s in terms of noise, gain and scattering parameters through a noise parameters test set,” IEEE Trans. Microwave Theory Tech., vol. MTT-32, no. 3, pp. 231–237, 1984.
38. R. A. Speciale, “A generalization of the TSD network calibration procedure, coupling n port scattering parameter measurements affected by leakage errors,” IEEE Trans. Microwave Theory Tech., vol. MTT-25, no. 12 pp. 1100–1115, 1977.
39. J. J. Berenz, K. Nakano, and K. P. Weller, “Low noise high electron mobility transistors,” in IEEE MTT-S Symp. Dig., pp. 83–86, 1984.
40. P. R. Jay, H. Derewonko, D. Adam, P. Briere, D. Delagebeaudeuf, P. Delescluse, and J. F. Rochette, “Design of TEGFET devices for optimum low noise high frequency operation,” IEEE Trans. Electron Devices, vol. ED-33, no. 5, pp. 590–594, 1986.
41. K. Kamei, S. Hori, H. Kawasaki, K. Shibata, H. Mashita, Y. Ashizawa, “Low noise high electron mobility transistor,” in Proc. 11th GaAs and Related Compounds Conf., (Biarritz, France), 1984.
42. H. Hida, K. Ohata, Y. Suzuki, and H. Toyoshima, “A new low noise AlGaAs:GaAs 2 DEG with a surface undoped layer,” IEEE Trans. Electron Devices, vol. ED-33 no. 5, pp. 601–607, 1986.
43. K. Tanaka, M. Ogawa, K. Togashi, H. Takakuwa, H. Ohke, M. Kanazuwa, U. Kato, and S. Watanabe, “Low-noise HEMT using MOCVD,” IEEE Trans. Electron Devices, vol. ED-33 no. 12, pp. 2053–2058, 1986.
44. K. Joshin, T. Mimura, M. Niori, Y. Yamashita, K. Kosmura, and J. Saito, “Noise performance of microwave HEMT,” in IEEE MTT-S Symp. Dig., pp. 563–565, 1983.
45. M. Wolny, P. Chambery, A. Briere, and J. P. Andre, “Low noise high electron mobility transistor grown by MOVPE,” in Proc. High Speed Electronics Conf. (Stockholm, Sweden), 1986, pp. 148–151.