Microwave Performance of Optically Fabricated T-Gate Thin Film Silicon-on-Sapphire Based MOSFET's

IEEE Electron Device Letters

Volumn 16, Issue 6, 1995, Pages 289-292

  de la Houssaye, P R ^a   Offord, B ^a   Imthurn, G ^a   Garcia, G A ^a   Lagnado, I ^a   Chang, C E ^b   Johnson, R ^b   Asbeck, P M ^b  

^a Naval Command   (United States)

^b UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

VOLTAGE GAIN;

FABRICATION; FREQUENCIES; GATES (TRANSISTOR); MICROWAVES; MOSFET DEVICES; SAPPHIRE; SEMICONDUCTING SILICON; SILICON ON SAPPHIRE TECHNOLOGY; SPURIOUS SIGNAL NOISE; THICK FILMS;

THIN FILM TRANSISTORS;

EID: 0029322188     PISSN: 07413106     EISSN: 15580563     Source Type: Journal    
DOI: 10.1109/55.790738     Document Type: Article

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