1/f Noise in MOS Devices, Mobility or Number Fluctuations?

IEEE Transactions on Electron Devices

Volumn 41, Issue 11, 1994, Pages 1936-1945

  Vandamme, L K J ^a   Li, Xiaosong ^a   Rigaud, Dominique ^b  

^a EINDHOVEN UNIVERSITY OF TECHNOLOGY   (Netherlands)

^b UNIV MONTPELLIER   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CORRELATION METHODS; DEGRADATION; ELECTRIC RESISTANCE; GATES (TRANSISTOR); GEOMETRY; HOT CARRIERS; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DEVICE STRUCTURES; SIGNAL TO NOISE RATIO;

CIRCUIT SIMULATION ORIENTED EQUATIONS; DEGRADATION EFFECTS; MOBILITY FLUCTUATIONS; NUMBER FLUCTUATIONS;

MOSFET DEVICES;

EID: 0028547705     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/16.333809     Document Type: Article

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