A SOI-RF-CMOS technology on high resistivity SIMOX substrates for microwave applications to 5 GHz

IEEE Transactions on Electron Devices

Volumn 44, Issue 11, 1997, Pages 1981-1989

  Eggert, Dietmar ^a   Huebler, Peter ^a   Huerrich, Arnd ^a   Kueck, Heinz ^a   Budde, Wolfram ^a   Vorwerk, Matthias ^a  

^a FRAUNHOFER INSTITUTE FOR MICROELECTRONIC CIRCUITS AND SYSTEMS   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; ELECTRIC CONDUCTIVITY OF SOLIDS; ELECTRIC FREQUENCY MEASUREMENT; INDUCTANCE MEASUREMENT; INTEGRATED CIRCUIT MANUFACTURE; MIM DEVICES; MOSFET DEVICES; SILICON ON INSULATOR TECHNOLOGY; SUBSTRATES; ULSI CIRCUITS; WAVEGUIDES;

SEPARATION THROUGH IMPLANTED OXYGEN (SIMOX) SUBSTRATES;

CMOS INTEGRATED CIRCUITS;

EID: 0031270521     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.641369     Document Type: Article

References (19)

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