Silicon RF devices fabricated by ULSI processes featuring 0.1-μm SOI-CMOS and suspended inductors

Digest of Technical Papers - Symposium on VLSI Technology

Volumn , Issue , 1996, Pages 104-105

  Hisamoto, Digh ^a   Tanaka, Satoshi ^a   Tanimoto, Takuma ^a   Nakamura, Yoshitaka ^a   Kimura, Shin'ichiro ^a  

^a Central Research Laboratory   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CAVITY RESONATORS; CHEMICAL VAPOR DEPOSITION; CMOS INTEGRATED CIRCUITS; ELECTRIC INDUCTORS; ELECTRIC NETWORK ANALYZERS; ETCHING; MONOLITHIC MICROWAVE INTEGRATED CIRCUITS; MOS DEVICES; NATURAL FREQUENCIES; SILICA; SILICON WAFERS; ULSI CIRCUITS;

BURIED OXIDE LAYERS; CHANNEL LENGTH; CMOS DEVICE CHARACTERISTICS; ETCHING STOPPER; SILICON RF DEVICES; SUSPENDED INDUCTORS; THRESHOLD VOLTAGE;

SILICON ON INSULATOR TECHNOLOGY;

EID: 0029713075     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)