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Volumn 41, Issue 1, 1994, Pages 69-75

Measurement and Modeling of Self-Heating in SOI NMOSFET’s

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EID: 84944378006     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/16.259622     Document Type: Article
Times cited : (299)

References (15)
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    • L. J. McDaid, S. Hall, W. Eccleston, and J. C. Alderman, “Monitoring the temperature rise in SOI transistors by measurement of leakage current,” in Proc. IEEE SOI/SOS Tech. Conf, 1991, pp. 28-29.
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    • K. E. Goodson, M. I. Flik, L. T. Su, and D. A. Antoniadis, “Annealing-temperature dependence of the thermal conductivity of LPCVD silicon-dioxide layers,” IEEE Electron Dev. Lett., vol. 14, no. 10, pp. 490-492, 1993.
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.