Microscopic Noise Modeling and Macroscopic Noise Models: How Good a Connection?

IEEE Transactions on Electron Devices

Volumn 41, Issue 5, 1994, Pages 779-786

  Danneville, Franois ^a   Happy, Henri ^a   Dambrine, Gilles ^a   Belquin, Jean Maxence ^a   Cappy, Alain ^a  

^a INSTITUT D ELECTRONIQUE   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC NETWORK PARAMETERS; EQUIVALENT CIRCUITS; FIELD EFFECT TRANSISTORS; GATES (TRANSISTOR); SPURIOUS SIGNAL NOISE;

DRAIN NOISE CURRENT SOURCES; DRAIN NOISE TEMPERATURE; GATE NOISE TEMPERATURE; HIGH FREQUENCY NOISE PERFORMANCE; MACROSCOPIC NOISE MODEL; MICROSCOPIC NOISE MODEL; NOISE PARAMETER; POSPIESZALSKI NOISE MODEL; SMALL SIGNAL EQUIVALENT CIRCUIT;

SEMICONDUCTOR DEVICE MODELS;

EID: 0028427016     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/16.285031     Document Type: Article

References (15)

1. H. Rhote and W. Dahlke, “Theory of noisy fourpoles,” Proc. IRE, vol. 44, no. 6, pp. 811–818, June 1956.
2. A. Van Der Ziel, “Thermal noise in field effect transistor,” Proc. IRE, vol. 50, 1808–1812, 1962.
3. A. Van Der Ziel, “Gate noise in field effect transistors at moderately high frequencies,” Proc. IRE, vol. 51, pp. 461–467, 1963.
4. R. A. Pucel, H. A. Haus, and H. Statz, “Signal and noise properties of gallium arsenide field effect transistors,” Advances In Electronics and Electron Physics, vol. 38, pp. 195–265, 1974.
5. A. Cappy, “Device physics and noise models: How good a connection?" IEEE-MTTs, Invited Paper, Albuquerque, NM, June 1992.
6. M. W. Pospieszalski, “Modeling of noise parameters of MESFET’s and MODFET’s and their frequency and temperature dependence,” IEEE Trans. Microwave Techn. Theory, vol. 37, pp. 1340–1350, Sept. 1989.
7. M. W. Pospieszalski and A. C. Niedzwiecki, “FET noise model and on-wafer measurement of noise parameters,” IEEE-MTTs, Boston, MA, pp. 1117–1120, June 1991.
8. M. S. Gupta, O. Pitzalis, S. E. Rosenbaum, and P. T. Greiling, “Microwave noise characterization of GaAs MESFET’s by on-wafer measurement of the output noise current,” IEEE Trans. Microwave Theory Techn., vol. 35, pp. 1208–1217, Dec. 1987.
9. M. S. Gupta and P. T. Greiling, “Microwave noise characterization of GaAs MESFET’s, determination of extrinsic noise parameters,” IEEE Trans. Microwave Theory Techn., vol. 36, pp. 745–751, Apr. 1988.
10. A. Cappy and W. Heinrich, “High-frequency FET noise performance, a new approach,” IEEE Trans. Electron Devices, vol. 36, pp. 403–409, Feb. 1990.
11. K. M. Van Vliet, “Noise in single injection diodes I-A survey of methods,” J. Appl. Phys., vol. 46, no. 4, pp. 1804–1813, Apr. 1976.
12. A. Cappy, “Noise modeling and measurement techniques,” IEEE Trans. Microwave Theory Technol., vol. 36, Jan. 1988.
13. H. Happy, O. Pribetich, G. Dambrine, J. Alamkan, Y. Cordier, and A. Cappy, “HELENA: A new software for the design of MMICs,” IEEE-MTTS, Boston, MA, pp. 627–630, June 1991.
14. H. Happy, G. Dambrine, J. Alamkan, F. Danneville, F. Kaptche-Tagne, and A. Cappy, “HELENA: A friendly software for calculating the DC, AC and noise performance of HEMTs,” Int. J. Microwave and Millimeter-Wave Computer-Aided Eng., vol. 3, no. 1, pp. 14—28, 1993.
15. R. I. Taylor, D. M. Brookbanks, and A. H. Holden, “Determining intrinsic noise parameters of 0.25 pm gate pseudomorphic HEMT,” Electron. Lett., vol. 27, no. 21, Oct. 1991.