Signal and Noise Properties of Gallium Arsenide Microwave Field-Effect Transistors

Advances in Electronics and Electron Physics

Volumn 38, Issue C, 1975, Pages 195-265

  Pucel, Robert A ^a   Haus, Hermann A ^b   Statz, Hermann ^a  

^a RAYTHEON COMPANY   (United States)

^b MASSACHUSETTS INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

TRANSISTORS, FIELD EFFECT;

EID: 0016603256     PISSN: 00652539     EISSN: None     Source Type: Book Series    
DOI: 10.1016/S0065-2539(08)61205-6     Document Type: Article

References (71)

1. Anastassiou, A., Strutt, M.J.O., Proc. IEEE 62 (1974), 406–408.
2. Baechtold, W., IEEE Trans. Electron Devices 18 (1971), 97–104.
3. Baechtold, W., IEEE Trans. Electron Devices 19 (1972), 674–680.
4. Baechtold, W., Daetwyler, K., Forster, T., Mohr, T.O., Walter, W., Wolf, P., Electron. Lett. 9 (1973), 232–234.
5. G. E. Brehm, Proc. Bien. Cornell Elec. Eng. Conf, 4th, 1973 pp. 77–85 (1973).
6. Brehm, G.E., Vendelin, G.D., Microwaves 13 (1974), 38–44.
7. Bruncke, W.C., van der Ziel, A., IEEE Trans. Electron Devices 13 (1966), 323–329.
8. Castelain, A., Perichon, R., Constant, E., Le Borgne, A., Appl. Phys. Lett. 25 (1974), 721–723.
9. Chiu, T.L., Ghosh, H.N., Solid-State Electron 14 (1971), 1307–1317.
10. Copeland, J.A., J. Appl. Phys. 39 (1968), 5101–5103.
11. Copeland, J.A., IEEE Trans. Electron Devices 18 (1971), 50–53.
12. Dacey, G.C., Ross, I.M., Bell Syst. Tech. J. 34 (1955), 1149–1189.
13. Dahlke, W., Arch. Elek. Uebertragung 9 (1955), 391–401.
14. Fawcett, W., Rees, H.D., Phys. Lett. A 29 (1969), 578–579.
15. Geurst, J.A., Solid-State Electron 8 (1965), 563–566.
16. Grebene, A.B., Ghandhi, S.K., Solid-State Electron 12 (1969), 573–589.
17. Halladay, H.E., Bruncke, W.C., Proc. IEEE, 51, 1963, 1671.
18. Hartmann, K., Strutt, M.J.O., IEEE Trans. Electron Devices 20 (1973), 874–877.
19. Hauser, J.R., IEEE Trans. Electron Devices 12 (1965), 605–618.
20. Hauser, J.R., Solid-State Electron 10 (1967), 577–587.
21. Himsworth, B., Solid-State Electron 15 (1972), 1353–1361.
22. Hofstein, S.R., Warfield, G., IEEE Trans. Electron Devices 12 (1965), 129–138.
23. Hower, P.L., Bechtel, G.N., IEEE Trans. Electron Devices 20 (1973), 213–220.
24. P. L. Hower, W. W. Hooper, D. A. Tremere, W. Lehrer, and C. A. Bittmann, Proc. Symp. Gallium Arsenide, 2nd, 1968 Paper 29, pp. 187–194 (1969).
25. Hower, P.L., Hooper, W.W., Cairns, B.R., Fairman, R.D., Tremere, D.A., Willardson, R.K., Beer, A.C., (eds.) “Semiconductors and Semimetals”, 7A, 1971, Academic Press, New York, 197–200.
26. Jordan, A.G., Jordan, N.A., IEEE Trans. Electron Devices 12 (1965), 148–156.
27. Kässer, R.D., IEEE Trans. Electron Devices 19 (1972), 164–171.
28. Klaassen, F.M., IEEE Trans. Electron Devices 14 (1967), 368–373.
29. Klaassen, F.M., IEEE Trans. Electron Devices 18 (1971), 74–75.
30. Klaassen, F.M., Prins, J., IEEE Trans. Electron Devices 16 (1969), 952–957.
31. Lehovec, K., Zuleeg, R., Solid-State Electron 13 (1970), 1415–1426.
32. C. A. Liechti, E. Gowen, and J. Cohen, Int. Solid-State Circuits Conf. Dig. Tech. Pap. p. 158 (1972).
33. H. E. G. Luxton, Eur. Solid-State Devices Res. Conf., 1972 p. 206 (1973).
34. H. E. G. Luxton, Proc. Eur. Microwave Conf., 1974 pp. 92–96 (1974).
35. Mead, C.A., Proc. IEEE 54 (1966), 307–308.
36. Mo, D.L., Yanai, H., IEEE Trans. Electron Devices 17 (1970), 577–586.
37. Paul, R., Arch. Elek. Uebertragung 21 (1967), 259–272.
38. Prim, R.C., Shockley, W., IRE Trans. Electron Devices 4 (1953), 1–14.
39. Reddi, V.G.K., Sah, C.T., IEEE Trans. Electron Devices 12 (1965), 139–141.
40. Reiser, M., Electron. Lett. 6 (1970), 493–494.
41. Rothe, H., Dahlke, W., Proc. IRE 44 (1956), 811–818.
42. Ruch, J.G., Fawcett, W., J. Appl. Phys. 41 (1970), 3843–3849.
43. Ruch, J.G., Kino, G.S., Phys. Rev. 174 (1968), 921–931.
44. Ryder, E.J., Shockley, W., Phys. Rev. 81 (1951), 139–140.
45. Shockley, W., Bell Syst. Tech. J. 30 (1951), 990–1034.
46. Shockley, W., Proc. IRE 40 (1952), 1365–1376.
47. Shockley, W., Copeland, J.A., James, R.P., Löwdin, P.-O., (eds.) “Quantum Theory of Atoms, Molecules, and the Solid State”, 1966, Academic Press, New York, 537–563.
48. Shoji, M., IEEE Trans. Electron Devices 13 (1966), 520–524.
49. Smythe, W.R., “Static and Dynamic Electricity,”, 3rd ed., 1968, McGraw-Hill, New York, 100–104.
50. Statz, H., Haus, H.A., Pucel, R.A., IEEE Trans. Electron Devices 21 (1974), 549–562.
51. Tarney, K., Proc. IEEE 54 (1966), 1077–1078.
52. Trofimenkoff, F.N., Proc. IEEE 53 (1965), 1765–1766.
53. J. A. Turner and B. L. H. Wilson, Proc. Int. Symp. Gallium Arsenide, 2nd, 1968 Paper 30, pp. 195–204 (1969).
54. van der Ziel, A., Proc. IRE 50 (1962), 1808–1812.
55. van der Ziel, A., Proc. IEEE 51 (1963), 461–467.
56. van der Ziel, A., Proc. IEEE 51 (1963), 1670–1671.
57. van der Ziel, A., Electron. Lett. 5 (1969), 161–162.
58. van der Ziel, A., Solid-State Electron 14 (1971), 347–350.
59. van der Ziel, A., IEEE Trans. Electron Devices, 18, 1971, 977.
60. van der Ziel, A., Ero, J.W., IEEE Trans. Electron Devices 11 (1964), 128–135.
61. van der Ziel, A., van Vliet, K.M., Solid-State Electron 11 (1968), 508–509.
62. Wasserstrom, E., McKenna, J., Bell Syst. Tech. J. 49 (1970), 853–877.
63. Watson, H.A., (eds.) “Microwave Semiconductor Devices and their Applications,”, 1969, McGraw-Hill, New York, 501–506.
64. H. R. Winteler and A. Steinemann, Proc. Int. Symp. Gallium Arsenide, 1st, 1966 Paper 30A, pp. 228–232 (1967).
65. Wolf, P., IBM J. Res. Develop. 14 (1970), 125–141.
66. Wu, S.Y., Sah, C.T., Solid-State Electron 10 (1967), 593–609.
67. Yang, E.S., Advan. Electron. Electron Phys. 31 (1972), 247–265.
68. Zuleeg, R., Proc. IEEE 53 (1965), 2111–2112.
69. Zuleeg, R., Solid-State Electron 10 (1967), 559–576.
70. Zuleeg, R., Proc. IEEE 56 (1968), 879–880.
71. R. Zuleeg, Proc. Int. Symp. Gallium Arsenide, 2nd, 1968 Paper No. 28, pp. 181–186 (1969).