0.2μm analog CMOS with very low noise figure at 2 GHz operation

Digest of Technical Papers - Symposium on VLSI Technology

Volumn , Issue , 1996, Pages 132-133

  Ohguro, T ^a   Morifuji, E ^a   Saito, M ^a   Ono, M ^a   Yoshitomi, T ^a   Momose, H S ^a   Ito, N ^a   Iwai, H ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRODES; MOSFET DEVICES; NICKEL COMPOUNDS; PHOSPHORUS; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR DOPING; SPURIOUS SIGNAL NOISE;

GATE SHEET RESISTANCES; NICKEL SALICIDE TECHNIQUE; PARASITE RESISTANCES;

CMOS INTEGRATED CIRCUITS;

EID: 0029717430     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (4)