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Volumn 7, Issue 10, 1997, Pages 350-352

A 2.4-GHz silicon-on-sapphire CMOS low-noise amplifier

Author keywords

Microwave FET amplifiers; MMIC's; Noise

Indexed keywords

CAPACITORS; CMOS INTEGRATED CIRCUITS; COMPUTER SIMULATION; ELECTRIC INDUCTORS; ELECTRIC LOSSES; FIELD EFFECT TRANSISTORS; INTEGRATED CIRCUIT LAYOUT; MONOLITHIC MICROWAVE INTEGRATED CIRCUITS; SILICON ON SAPPHIRE TECHNOLOGY; SPURIOUS SIGNAL NOISE;

EID: 0031258904     PISSN: 10518207     EISSN: None     Source Type: Journal    
DOI: 10.1109/75.631198     Document Type: Article
Times cited : (10)

References (8)
  • 1
    • 0031147079 scopus 로고    scopus 로고
    • A 1.5-V, 1.5-GHz CMOS low noise amplifier
    • May
    • D. K. Shaeffer and T. H. Lee, "A 1.5-V, 1.5-GHz CMOS low noise amplifier," IEEE J. Solid-State Circuits, vol. 32, no. 5, May 1997.
    • (1997) IEEE J. Solid-State Circuits , vol.32 , Issue.5
    • Shaeffer, D.K.1    Lee, T.H.2
  • 4
    • 0342912402 scopus 로고
    • Thin (100 nm) SOS for application to beyond VLSI microelectronics
    • R. E. Reedy and G. A. Garcia, "Thin (100 nm) SOS for application to beyond VLSI microelectronics," in 1988 Material Research Society Symp., 1988, vol. 107.
    • (1988) 1988 Material Research Society Symp. , vol.107
    • Reedy, R.E.1    Garcia, G.A.2
  • 6
    • 0027591017 scopus 로고
    • Large suspended inductors on silicon and their use in a 2-μm CMOS RF amplifier
    • May
    • J. Y.-C. Chang, A. A. Abidi, and M. Gaitan, "Large suspended inductors on silicon and their use in a 2-μm CMOS RF amplifier," IEEE Electron Device Lett., vol. 14, May 1993.
    • (1993) IEEE Electron Device Lett. , vol.14
    • Chang, J.Y.-C.1    Abidi, A.A.2    Gaitan, M.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.