Modeling of Noise Parameters of MESFET's and MODFET's and Their Frequency and Temperature Dependence

IEEE Transactions on Microwave Theory and Techniques

Volumn 37, Issue 9, 1989, Pages 1340-1350

  Pospieszalski, Marian W ^a  

^a NATIONAL RADIO ASTRONOMY OBSERVATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC NETWORKS--EQUIVALENT CIRCUITS; MICROWAVES; NOISE, SPURIOUS SIGNAL--MATHEMATICAL MODELS; TRANSISTORS, FIELD EFFECT;

CRYOGENIC TEMPERATURE EXPERIMENTATION; GENERATOR IMPEDANCE MINIMIZING NOISE; MESFETS; MINIMUM NOISE TEMPERATURE; MODFETS; NOISE PARAMETER MODELING;

SEMICONDUCTOR DEVICES;

EID: 0024738288     PISSN: 00189480     EISSN: 15579670     Source Type: Journal    
DOI: 10.1109/22.32217     Document Type: Article

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