Microwave Performance of SOI n-MOSFET’s and Coplanar Waveguides

IEEE Electron Device Letters

Volumn 12, Issue 1, 1991, Pages 26-27

  Caviglia, Anthony L ^a   Potter, R C ^a   West, L J ^a  

^a HONEYWELL   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTOR DEVICE MANUFACTURE--SILICON ON INSULATOR TECHNOLOGY; WAVEGUIDES;

BESOI DEVICES; SIMOX DEVICES;

SEMICONDUCTOR DEVICES, MOSFET;

EID: 0025956214     PISSN: 07413106     EISSN: 15580563     Source Type: Journal    
DOI: 10.1109/55.75687     Document Type: Article

References (6)

1. A. Kamgar et al., “Ultra-high speed CMOS circuits in thin SIMOX films,” in IEDM Tech. Dig., 1989, p. 829.
2. W. P. Maszara, G. Goetz, A. Caviglia, and J. B. McKitterick, “Bonding of silicon wafers for silicon-on-insulator,” J. Appl. Phys., vol. 64, no. 10, p. 4943, 1988.
3. A. L. Caviglia, R. C. Potter, and L. J. West, “Microwave performance of SIMOX and BESOI NMOS FETs,” in Proc. 4th Int. Symp. Silicon-on-Insulator Technology and Devices, 1990, p. 524.
4. P. J. van Wijnen, H. R. Claessen, and E. A. Wolsheimer, “A new straightforward calibration and correction procedure for ‘on-wafer’ high frequency S-parameter measurements (45 MHz-18 GHz),” in Proc. Bipolar Circuits and Technology Meeting, 1987, p. 70.
5. C. A. Liechti, “Microwave field-effect transistors —1976,” IEEE Trans. Microwave Theory Tech., vol. MTT-24, no. 6, p. 279, 1976.
6. T. M. Hyltin, “Microstrip transmission on semiconductor dielectrics,” IEEE Trans. Microwave Theory Tech., vol. MTT-13, no. 6, p. 777, 1965.