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Volumn 42, Issue 8, 1995, Pages 1481-1486

Experimental 0.25-μm-Gate Fully Depleted CMOS/SIMOX Process Using a New Two-Step LOCOS Isolation Technique

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; GATES (TRANSISTOR); HIGH TEMPERATURE APPLICATIONS; OSCILLATORS (ELECTRONIC); OXIDATION; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE STRUCTURES; VLSI CIRCUITS;

EID: 0029357116     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/16.398663     Document Type: Article
Times cited : (83)

References (15)
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  • 5
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    • Formation of silicon nitride at a Si-SiO2 interface during local oxidation of silicon and during heat-treatment of oxidized silicon in NH3 gas
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.