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Volumn 71, Issue 21, 1997, Pages 3135-3137

Polarization field effects on the electron-hole recombination dynamics in In0.2Ga0.8N/In1-xGaxN multiple quantum wells

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EID: 0542388842     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.120269     Document Type: Article
Times cited : (119)

References (21)
  • 16
    • 5844221212 scopus 로고    scopus 로고
    • note
    • We have calculated the spontaneous bulk polarization of the epilayers using a superlattice consisting of eight layers of wurtzite and six layers of lattice-matched zinc-blende structure of the same material. The bulk spontaneous polarization is rigorously zero in the unstrained zinc-blende structure. Furthermore, no chemical or geometrical perturbations are introduced by the interface (due to the lattice match and the special nature of the zinc-blende-wurtzite interface); consequently, the spontaneous polarization present in the wurtzite structure can be unambiguously determined from the slope of the macroscopic average of the electrostatic potential (see Ref. 14).
  • 21
    • 5844307673 scopus 로고    scopus 로고
    • note
    • We treated the quantum dot as a spherical well potential within the effective mass approximation. The condition to have at least one bound state in the quantum dot gives an estimate of the barrier needed to localize the carriers. This value corresponds to a specific concentration, which can be extrapolated from the values of the band offsets reported in Table II.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.