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Volumn 35, Issue 2 SUPPL. B, 1996, Pages 1420-1423
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Biaxial strain effect on wurtzite GaN/AlGaN quantum well lasers
a
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Author keywords
Biaxial strain; First principles calculation; GaN AlGaN quantum wells; k p theory; Laser diodes; Optical gain; Subband structure; Wurtzite
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Indexed keywords
BAND STRUCTURE;
CALCULATIONS;
CRYSTAL LATTICES;
CURRENT DENSITY;
ELECTRONIC STRUCTURE;
ENERGY GAP;
OPTICAL PROPERTIES;
SEMICONDUCTING ALUMINUM COMPOUNDS;
SEMICONDUCTING GALLIUM COMPOUNDS;
SEMICONDUCTOR QUANTUM WELLS;
ALUMINUM GALLIUM NITRIDE;
BIAXIAL STRAIN EFFECT;
FIRST PRINCIPLES CALCULATIONS;
GALLIUM NITRIDE;
LATTICE MISMATCH;
OPTICAL GAIN;
SPIN ORBIT COUPLING;
STRONG ELECTRON AFFINITY;
VALENCE BAND STATES;
WURTZITE;
SEMICONDUCTOR LASERS;
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EID: 0030078841
PISSN: 00214922
EISSN: None
Source Type: Journal
DOI: 10.1143/jjap.35.1420 Document Type: Article |
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Times cited : (84)
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References (13)
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