A novel technique of N2Otreatment on NH3-nitrided oxide as gate dielectric for nMOS transistors

IEEE Transactions on Electron Devices

Volumn 43, Issue 11, 1996, Pages 1907-1913

  Zeng, Xu ^a   Lai, Pui To ^a   Ng, Wai Tung ^b  

^a UNIVERSITY OF HONG KONG   (Hong Kong)

^b UNIVERSITY OF TORONTO   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0030287694     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.543026     Document Type: Article

References (32)

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