Novel N2O-Oxynitridation Technology for Forming Highly Reliable Eeprom Tunnel Oxide Films

IEEE Electron Device Letters

Volumn 12, Issue 11, 1991, Pages 587-589

  Fukuda, H ^a   Yasuda, M ^a   Iwabuchi, T ^a   Ohno, S ^a  

^a OKI ELECTRIC INDUSTRY CO   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTING SILICON; SILICA--THIN FILMS;

EEPROM TUNNEL OXIDE FILMS; ELECTRON TRAPS; OXINITRIDATION;

DATA STORAGE, DIGITAL;

EID: 0026255223     PISSN: 07413106     EISSN: 15580563     Source Type: Journal    
DOI: 10.1109/55.119206     Document Type: Article

References (14)

1. D. A. Baglee and M. C. Smayling, “The effects of write/erase cycling on data loss in EEPROMs,” in IEDM Tech. Dig. ‘Washington, DC’, 1985, pp. 624–626.
2. K. Naruke, S. Taguchi, and M. Wada, “Stress induced leakage current limiting to scale down EEPROM tunnel oxide thickness,” in IEDM Tech. Dig. ‘San Francisco, CA’, 1988, pp. 424–427.
3. S. Aritome et al., “A reliable BiPolarity write/erase technology in flash EEPROMs,” in IEDM Tech. Dig. ‘San Francisco, CA’, 1990, pp. 111–114.
4. T. Ito, T. Nakamura, and H. Ishikawa, “Advantages of thermal nitride and nitroxide gate films in VLSI process,” IEEE Trans. Electron Devices, vol. ED-29, pp. 498–502, 1982.
5. M. M. Moslehi and K. C. Saraswat,” Thermal nitridation of Si and SiO2 for VLSI,” IEEE Trans. Electron Devices, vol. ED-32, pp. 106–123, 1985.
6. S. K. Lai, J. Lee, and V. K. Dham, “Electrical properties of nitrided-oxide systems for use in gate dielectrics and EEPROM,” in IEDM Tech. Dig. ‘Washington, DC’, 1983, pp. 190–193.
7. T. Hori, H. Iwasaki, and K. Tsuji, “Electrical and physical properties of ultrathin reoxidized nitrided oxide prepared by rapid thermal processing,” IEEE Trans. Electron Devices, vol. 36, pp. 340–350, 1989.
8. N. Ajika et al., “Optimization of nitridation and re-oxidation condition for an EEPROM tunneling dielectric,” in Extended Abstr. 22nd ‘1990 Int.’ Conf. Solid State Devices Mater. ‘SSDM’ ‘Sendai, Japan’, pp. 171–174.
9. H. Fukuda, T. Arakawa, and S. Ohno, “Highly reliable thin nitrided SiO2 film formed by rapid thermal processing in an N2O ambient,” Electron. Lett., vol. 26, pp. 1505–1506, 1990.
10. H. Fukuda, T. Arakawa, and S. Ohno, “Highly reliable thin nitrided SiO2 films formed by rapid thermal processing in an N2O ambient,” Japan. J. Appl. Phys., vol. 29, pp. L2333–2336, 1990.
11. A. Uchiyama, H. Fukuda, T. Hayashi, T. Iwabuchi, and S. Ohno, “High performance dual-gate sub-halfmicron CMOSFETs with 6 nm-thick nitrided SiO2 films in an N2O ambient,” in IEDM Tech. Dig. ‘San Francisco, CA’, 1990, pp. 425–428.
12. H. Fukuda, M. Yasuda, and S. Ohno, “Electrical properties of thin oxynitrided SiO2 films formed by rapid thermal processing in an N2O ambient,” Electron. Lett., vol. 27, pp. 440–441, 1991.
13. J. L. Bischoff, L. Kubier, and D. Bolmont, “Thermal nitridation of Si‘100’ – 2 X 1 surface by NH3: XPS results,” Surface Sci., vol. 209, pp. 115–130, 1989.
14. A. T. Wu et al., “Nitridatin-induced surface donor layer in silicon,” Appl. Phys. Lett., vol. 55, pp. 1665–1667, 1989.