The Role of Electron Trap Creation in Enhanced Hot-Carrier Degradation During AC Stress

IEEE Electron Device Letters

Volumn 11, Issue 6, 1990, Pages 267-269

  Mistry, Kaizad ^a   Doyle, Brian ^a  

^a HEWLETT PACKARD COMPANY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICES--CHARGE CARRIERS;

AC DEGRADATION; ELECTRON TRAP CREATION; GATE VOLTAGE TRANSIENTS; HOT CARRIER DEGRADATION;

SEMICONDUCTOR DEVICES, MOSFET;

EID: 0025449024     PISSN: 07413106     EISSN: 15580563     Source Type: Journal    
DOI: 10.1109/55.55276     Document Type: Article

References (15)

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