Excellent Immunity of GIDL to Hot-Electron Stress in Reoxidized Nitrided Gate Oxide MOSFET's

IEEE Electron Device Letters

Volumn 13, Issue 1, 1992, Pages 47-49

  Joshi, Aniruddha B ^a   Kwong, Dim Lee ^a  

^a UNIVERSITY OF TEXAS AT AUSTIN   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRONS; OXIDES;

GATE-INDUCED DRAIN LEAKAGE (GIDL); HOT-ELECTRON STRESS; NITRIDED OXIDES; REOXIDIZED NITRIDED OXIDES;

SEMICONDUCTOR DEVICES, MOSFET;

EID: 0026678225     PISSN: 07413106     EISSN: 15580563     Source Type: Journal    
DOI: 10.1109/55.144947     Document Type: Article

References (7)

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3. S. Banerjee, J. Coleman, W. Richardson, and A. Shah, “A band-to-band tunneling effect in the trench transistor cell,” in Symp. VLSI Tech. Dig., 1987, p. 97.
4. Y. Igura, H. Matsuoka, and E. Takeda, “New device degradation due to ‘cold’ carriers by band-to-band tunneling,” IEEE Electron Device Lett., vol. 10, p. 227, 1989.
5. J.E. Chung, M.C. Jeng, J.E. Moon, P.K. Ko, and C. Hu, “Performance and reliability design issues for deep-submicrometer MOSFET's,” IEEE Trans. Electron Devices, vol. 38, p. 545, 1991.
6. H. Sasaki, M. Saitoh, and K. Hashimoto, “Hot-carrier induced drain leakage current in n-channel MOSFET's,” in IEDM Tech. Dig., 1987, p. 726.
7. G.Q. Lo and D.L. Kwong, “Roles of oxide trapped charge and generated interface states on GIDL under hot-carrier stressing,” in IEDM Tech. Dig., 1990, p. 557.