Improved performance and reliability of MOSFETs with ultrathin gate oxides prepared by conventional furnace oxidation of Si in pure N2O ambient

Digest of Technical Papers - Symposium on VLSI Technology

Volumn , Issue , 1991, Pages 43-44

  Lo, G Q ^a   Ting, W ^a   Ahn, J ^a   Kwong, D L ^a  

^a NONE

Author keywords

[No Author keywords available]

Indexed keywords

DIELECTRIC DEVICES; NITROGEN OXIDES; SEMICONDUCTOR DEVICES, MOS; SEMICONDUCTOR DEVICES, MOSFET;

MOSFETS; ULTRATHIN GATE OXIDES;

INTEGRATED CIRCUITS, ULSI;

EID: 0026390831     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)