Hot-Carrier Effects in n-Channel MOS Transistors Under Alternating Stress Conditions

IEEE Electron Device Letters

Volumn 9, Issue 5, 1988, Pages 232-234

  Bellens, R ^a   Heremans, P ^a   Groeseneken, G ^a   Maes, Herman E ^a  

^a IMEC   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTOR DEVICES, MOS - STRESSES;

ALTERNATING STRESS CONDITIONS; CHARGE PUMPING MEASUREMENTS; HOT-CARRIER EFFECTS; THRESHOLD-VOLTAGE (OR TRANSCONDUCTANCE) SHIFTS; TRAPPED CHARGE COMPENSATION;

TRANSISTORS;

EID: 0024014303     PISSN: 07413106     EISSN: 15580563     Source Type: Journal    
DOI: 10.1109/55.700     Document Type: Article

References (7)

1. J. Choi, P. Ko, and C. Hu, “Hot-carrier-induced MOSFET degradation under AC stress”, IEEE Electron Device Lett., vol. EDL-8, no. 8, pp. 333-335, 1987.
2. W. Weber, C. Werner, A. v. Schwerin, “Lifetimes and substrate currents in static and dynamic hot-carrier degradation”, in IEDM Dig. Tech. Papers, 1986, pp. 390-393.
3. T. Horiuchi, H. Mikoshiba, K. Nakamura, and K. Hamano, “A simple method to evaluate device lifetime due to hot-carrier effects under dynamic stress”, IEEE Electron Device Lett., vol. EDL-7, no. 6, pp. 337-339, 1986.
4. K. Hofmann, C. Werner, W. Weber, and G. Dorda, “Hot-electron and hole-emission effects in short n-channel MOSFET's”, IEEE Trans. Electron Devices, vol. ED-32, no. 3, pp. 691-699, 1985.
5. P. Heremans, H. E. Maes, and N. Saks, “Evaluation of hot carrier degradation of n-channel MOSFET's with the charge pumping technique”, IEEE Electron Device Lett., vol. EDL-7, no. 7, pp. 428-430, 1986.
6. G. Groeseneken, H. E. Maes, N. Beltran, and R. F. De Keersmaecker, “A reliable approach to charge-pumping measurements in MOS transistors”, IEEE Trans. Electron Devices, vol. ED-31, no. 1, pp. 42-53, 1984.
7. F. C. Hsu and S. Tam, “Relationship between MOSFET degradation and hot-electron-induced interface-state generation”, IEEE Electron Device Lett., vol. EDL-5, no. 5, pp. 50-52, 1984.